STP12NM60N 全國供應商、價格、PDF資料
STP12NM60N詳細規格
- 類別:FET - 單
- 描述:MOSFET N-CH 600V 10A TO-220
- 系列:MDmesh™
- 制造商:STMicroelectronics
- FET型:MOSFET N 通道,金屬氧化物
- FET特點:標準
- 漏極至源極電壓333Vdss444:600V
- 電流_連續漏極333Id4440a025000C:10A
- 開態Rds(最大)0a0IdwwwwVgs0a025000C:410 毫歐 @ 5A,10V
- Id時的Vgs333th444(最大):4V @ 250µA
- 閘電荷333Qg4440a0Vgs:30.5nC @ 10V
- 輸入電容333Ciss4440a0Vds:960pF @ 50V
- 功率_最大:90W
- 安裝類型:通孔
- 封裝/外殼:TO-220-3
- 供應商設備封裝:TO-220AB
- 包裝:管件
- 鉭 Vishay Sprague 2824(7260 公制) CAP TANT 150UF 20V 20% 2824
- 接口 - 驅動器,接收器,收發器 Texas Instruments 289-BGA IC TXRX QUAD 1-2.5GBPS 289-BGA
- 評估演示板和套件 STMicroelectronics BOARD EVAL ST72321BR9/STPM14
- FET - 單 STMicroelectronics TO-220-3 MOSFET N-CH 30V 60A TO-220
- Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps Texas Instruments 16-SOIC(0.154",3.90mm 寬) IC OPAMP GP R-R 3MHZ QUAD 16SOIC
- Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps Texas Instruments 8-DIP(0.300",7.62mm) IC OPAMP GP 110KHZ DUAL 8DIP
- 鉭 Vishay Sprague 2824(7260 公制) CAP TANT 150UF 20V 20% 2824
- FET - 陣列 Vishay Siliconix * MOSFET DUAL N-CHAN 40V SO-8
- 鉭 Vishay Sprague 2824(7260 公制) CAP TANT 150UF 20V 20% 2824
- 評估演示板和套件 STMicroelectronics EVAL BOARD ENERGY METER
- Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps Texas Instruments 16-SOIC(0.154",3.90mm 寬) IC OPAMP GP R-R 3MHZ QUAD 16SOIC
- Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps Texas Instruments 14-DIP(0.300",7.62mm) IC OPAMP GP 110KHZ QUAD LV 14DIP
- 鉭 Vishay Sprague 2824(7260 公制) CAP TANT 150UF 20V 20% 2824
- FET - 陣列 Vishay Siliconix * MOSFET DUAL N-CHAN 40V SO-8
- 鉭 Vishay Sprague 2824(7260 公制) CAP TANT 150UF 20V 20% 2824